MFG:SAMSUNG Package Cooled:TSOP D/C:06+
MFG: SAMSUNG
Package Cooled: TSOP
D/C: 06+
Description: The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x16,...
| Parameter | Short circuit current | Value | Unit |
| Voltage on any pin relative to Vss | VIN, VOUT | -1.0 ~ 4.6 | V |
| Voltage on any pin relative to Vss | VDD, VDDQ | -1.0 ~ 4.6 | V |
| Storage temperature | TSTG | -55 ~ +150 | °C |
| Power dissipation | PD | 1 | W |
| Short circuit current | IOS | 50 | mA |
K4S560432E-UC75
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The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4x16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cyc...
The K4S560432D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O...
The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O...
The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O...
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