K4S560832H-UC75

The K4S560832H-UC75 is designed as 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

The K4S560832H-UC75  has eleven features. (1) JEDEC standard 3.3V power supply. (2) LVTTL compatible with multiplexed address. (3) Four banks operation. (4) MRS cycle with address key programs which means CAS latency (2 & 3), burst length (1, 2, 4, 8 & full page) and burst type (sequential & interleave). (5) All inputs are sampled at the positive going edge of the system clock. (6) Burst read single-bit write operation. (7) DQM (x4,x8) & L(U)DQM (x16) for masking. (8) Auto & self refresh. (9) 64ms refresh period (8K Cycle). (10) 54 TSOP(II) Pb-free package. (11) RoHS compliant. That are all the main features.

Some absolute maximum ratings of K4S560832H-UC75  have been concluded into several points as follow. (1) Its voltage on any pin relative to Vss would be from -1.0V to 4.6V. (2) Its voltage on Vdd supply relative to Vss would be from -1.0V to 4.6V. (3) Its storage temperature would be from -55°C to +150°C. (4) Its power dissipation would be 1W. (5) Its short circuit current would be 50mA. It should be noted that permanent device damage may occur if "absolute maximum ratings" are exceeded.

Also some DC operating conditions about K4S560832H-UC75 . (1) Its supply voltage should be min 3.0V and typ 3.3V and max 3.6V. (2) Its input logic high voltage should be min 2.0V and typ 3.0V and max Vdd+0.3V. (3) Its input logic low voltage should be min -0.3V and typ 0V and max 0.8V. (4) Its input leakage current would be min -10uA and max 10uA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!