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Description: The K4S561632A-TC1H is one member of the K4S561632A family which is designed as the 268,435,456 bits s...


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K4S561632A-TC1H General Description


The K4S561632A-TC1H is one member of the K4S561632A family which is designed as the 268,435,456 bits synchronous high data rate Dynamic RAM. Features of the K4S561632A-TC1H are:(1)64ms refresh period (8K cycle);(2)auto & self refresh;(3)DQM for masking;(4)burst read single-bit write operation;(5)all inputs are sampled at the positive going edge of the system clock;(6)MRS cycle with address key programs;(7)four banks operation;(8)LVTTL compatible with multiplexed address;(9)JEDEC standard 3.3V power supply.

The absolute maximum ratings of the K4S561632A-TC1H can be summarized as:(1)voltage on any pin relative to Vss:-1.0 to 4.6 V;(2)voltage on VDD supply relative to Vss:-1.0 to 4.6 V;(3)storage temperature:-55 to +150 °C;(4)power dissipation:1 W;(5)short circuit current:50 mA;(6)output logic high voltage:2.4 V;(7)input logic low voltage:-0.3 to 0.8 V;(8)input logic high voltage:2.0 to VDD+0.3 V;(9)supply voltage:3.0 to 3.6 V. If you want to know more information such as the electrical characteristics about the K4S561632A-TC1H, please download the datasheet in www.seekic.com or www.chinaicmart.com .

K4S561632A-TC1H datasheet

K4S160822D
PDF/DataSheet Download

  • Datasheet: K4S160822D
  • File Size: 1211444 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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