Purchase K4S561632D, In-stock K4S561632D From SeekIC.
Part Number: K4S561632D
Description: The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 w...
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K4S561632D
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DataSheet
General Description
K4S561632D General Description
The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabri-cated with SAMSUNG's high performance CMOS technology. Syn-chronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system appli-cations.
K4S561632D Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to VSS | VIN, VOUT | -1.0 ~ 4.6 | V |
| Voltage on VDD & VDDQ supply relative to VSS | VDD, VDDQ | -1.0 ~ 4.6 | V |
| Storage temperature | TSTG | -55 ~ +150 | |
| Power dissipation | PD | 1 | W |
| Short circuit current | IOS | 50 | mA |
K4S561632D Features
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period (8K Cycle)
K4S561632D Connection Diagram
K4S561632D
PDF/DataSheet Download
- Datasheet: K4S561632D
- File Size: 70133 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4S160822D
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F10
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F7
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F8
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FH
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FL
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S161622D
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L10
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
K4S561632D Relative Products
K4S561632C
The K4S561632C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/...
K4S561632B
The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/...
K4S561632A-TC1H
The K4S561632A-TC1H is one member of the K4S561632A family which is designed as the 268,435,456 bits synchronous high data rate Dynamic RAM. Features of the K4S561632A-TC1H are:(1)64ms refresh period (8K cycle);(2)auto & self refresh;(3)DQM for masking;(...
K4S561632A
The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/...
K4S560832J-UC75
The K4S560832J-UC75 is designed as 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S560832J-UC75allows precise cycle contro...
K4S560832H-UC75
The K4S560832H-UC75 is designed as 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of ...
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