Purchase K4S561633D, In-stock K4S561633D From SeekIC.
Part Number: K4S561633D
Description: The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 w...
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K4S561633D
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DataSheet
General Description
K4S561633D General Description
The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
K4S561633D Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to Vss | VIN, VOUT | -1.0 ~ 4.6 | V |
| Voltage on VDD supply relative to Vss | VDD, VDDQ | -1.0 ~ 4.6 | V |
| Storage temperature | TSTG | -55 ~ +150 | °C |
| Power dissipation | PD | 1 | W |
| Short circuit current | IOS | 50 | mA |
K4S561633D Features
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1 & 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• DQM for masking
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
Extended Temperature Operation ( -25°C ~ 85°C).
Inderstrial Temperature Operation ( -40°C ~ 85°C).
• 54balls CSP (-RXXX - Pb, -BXXX - Pb Free)
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1 & 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• DQM for masking
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
Extended Temperature Operation ( -25°C ~ 85°C).
Inderstrial Temperature Operation ( -40°C ~ 85°C).
• 54balls CSP (-RXXX - Pb, -BXXX - Pb Free)
K4S160822D
PDF/DataSheet Download
- Datasheet: K4S160822D
- File Size: 1211444 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4S160822DT-G/F10
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F7
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F8
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FH
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FL
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S161622D
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L10
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L55
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
K4S561633D Relative Products
K4S561633C-RP
The K4S561633C-RP is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633C-RP allows precise cycle control with the us...
K4S561633C-RN
The K4S561633C-RN is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633C-RN allows precise cycle control with the us...
K4S561633C-RL
The K4S561633C-RL is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633C-RL allows precise cycle control with the us...
K4S561633C-BL
The K4S561633C-BL is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633C-BL allows precise cycle control with the us...
K4S561633C
The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock an...
K4S561632J-UC75
The K4S561632J-UC75 is a low dropout three terminal fixed output regulator with minimum of 1A output current capability. This K4S561632J-UC75 is specifically designed to provide well regulated supply for low voltage IC applications as well as generating cloc...
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