Purchase K4S56163LF-ZE, In-stock K4S56163LF-ZE From SeekIC.
Part Number: K4S56163LF-ZE
Description: The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 w...
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K4S56163LF-ZE
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DataSheet
General Description
K4S56163LF-ZE General Description
The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
K4S56163LF-ZE Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Voltage on any pin relative to Vss |
VIN, VOUT |
-1.0 ~ 3.6 |
V |
|
Voltage on VDD supply relative to Vss |
VDD, VDDQ |
-1.0 ~ 3.6 |
V |
|
Storage temperature |
TSTG |
-55 ~ +150 |
°C |
|
Power dissipation |
PD |
1 |
W |
|
Short circuit current |
IOS |
50 |
mA |
K4S56163LF-ZE Features
• 2.5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 54Bal ls BOC with 0.8mm bal l pitch
( -X : Leaded, -Z : Lead Free).
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 54Bal ls BOC with 0.8mm bal l pitch
( -X : Leaded, -Z : Lead Free).
K4S160822D
PDF/DataSheet Download
- Datasheet: K4S160822D
- File Size: 1211444 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4S160822DT-G/F10
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F7
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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- ·K4S160822DT-G/F8
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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- ·K4S160822DT-G/FH
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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- ·K4S160822DT-G/FL
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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- ·K4S161622D
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L10
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L55
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
K4S56163LF-ZE Relative Products
K4S56163LF-XE
The K4S56163LF-XE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-XE allows precise cycle control with the use...
K4S56163LF-N
The K4S56163LF-N is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-N allows precise cycle control with the use o...
K4S56163LF-L
The K4S56163LF-L is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-L allows precise cycle control with the use o...
K4S56163LF-G
The K4S56163LF-G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-G allows precise cycle control with the use o...
K4S56163LF-F
The K4S56163LF-F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-Fallows precise cycle control with the use of...
K4S56163LF-C
The K4S56163LF-C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-C allows precise cycle control with the use o...
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