Purchase K4S56323PF-F(H)G/F90, In-stock K4S56323PF-F(H)G/F90 From SeekIC.
Part Number: K4S56323PF-F(H)G/F90
Description: The K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 w...
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K4S56323PF-F(H)G/F90
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DataSheet
General Description
K4S56323PF-F(H)G/F90 General Description
The K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
K4S56323PF-F(H)G/F90 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to Vss |
VIN, VOUT |
-1.0 ~ 2.6 |
V |
| Voltage on VDD supply relative to Vss |
VDD, VDDQ |
-1.0 ~ 2.6 |
V |
| Storage temperature |
TSTG |
-55 ~ +150 |
°C |
| Power dissipation |
PD |
1.0 |
W |
| Short circuit current |
IOS |
50 |
mA |
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
K4S56323PF-F(H)G/F90 Features
• 1.8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (4K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (4K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).
K4S160822D
PDF/DataSheet Download
- Datasheet: K4S160822D
- File Size: 1211444 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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