K5D12121CM-DO90

The K5D12121CM-DO90 is one member of the K5D12121 family which is designed as the multi chip package memory that requires 15mA as program/erase current. This K5D12121CM-DO90 supports the traditional SRAM like asynchronous bus operation (asynchronous page read and asynchronous write), and the fully synchronous bus operation (synchronous burst read and synchronous burst write), and these two bus operation are defined through the mode register setting, so K5D12121CM-DO90 is suitable for use in data memory of mobile communication system to reduce not only mount area but also power consumption.

Features of the K5D12121CM-DO90 are:(1)Operating Temperature: -30°C to 85°C;(2)Single Voltage, 1.7V to 1.95V for Read and Write operations;(3)Read While Program/Erase Operation;(4)OTP Block: Extra 256Byte block;(5)Linear Burst : 8-word & 16-word with No-wrap & Wrap;(6)Eight 4Kword blocks and five hundreds eleven 32Kword blocks;(7)Reduce program time using the VPP;(8)Support Single & Quad word accelerate program;(9)Supports Driver Strength Optimization for system environment power saving;(10)Supports Asynchronous 4-Page Read and Asynchronous Write Operation.

The absolute maximum ratings of the K5D12121CM-DO90 can be summarized as:(1)Temperature Under Bias: -30 to +125 °C;(2)Storage Temperature: -65 to +150 °C;(3)Short Circuit Output Current: 5 mA;(4)Operating Temperature: -30 to +85 °C.

The electrical characteristics of this device can be summarized as:(1)Input Leakage Current: -1.0 to +1.0 A;(2)VPP Leakage Current: 35 A;(3)Output Leakage Current: -1.0 to +1.0 A;(4)Active Burst Read Current: 30 to 45 mA;(5)Read While Write Current: 40 to 70 mA;(6)Accelerated Program Current: 15 to 30 mA;(7)Standby Current: 25 to 70 A;(8)Standby Current During Reset: 25 to 70 A;(9)Input Low Voltage: -0.5 to 0.4 V;(10)Input High Voltage: Vcc-0.4 to Vcc+0.4 V. If you want to know more information such as the electrical characteristics about K5D12121CM-DO90, please download the datasheet in www.seekic.com or www.chinaicmart.com.