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Part Number: K5N07FM

 

 

 

 

Description: The VND5N07, VND5N07-1, VNP5N07FI and VNK5N07FM are monolithic devices made using STMicroelectronics V...


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K5N07FM General Description


The VND5N07, VND5N07-1, VNP5N07FI and VNK5N07FM are monolithic devices made using STMicroelectronics VIPower M0 Technology,intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

K5N07FM Maximum Ratings

Symbol Parameter Value Unit
DPAK
IPAK
ISOWATT220 SOT-82FM
VDS

Drain-source Voltage (Vin = 0)

Internally Clamped V

VIN

Input Voltage

18 V

ID

Drain Current

Internally Clamped A
IR

Reverse DC Output Current

-7 A
Vesd

Electrostatic discharge(C= 100 pF, R=1.5 K)

2000 V

Ptot

Total Dissipation at TC=25°C 60 24 9

W

Tj

Operating Junction Temperature

Internally Limited
TC

Case operating temperature

Internally Limited

Tstg

Storage Temperature

-55 to 150

K5N07FM Features

LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER MOSFET

K5N07FM datasheet

K5N07FM
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