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K6E0808C1E-I/E-P

Features: Fast Access Time 10, 12, 15ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.)(CMOS) : 2mA(Max.)0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.)K6E0808C1E-12 : 80mA(Max.)K6E0808C1E-15 : 80mA(Max.)• Single 5.0V±10% Power Supply• TTL Compatible Inputs a...

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SeekIC No. : 004383126 Detail

K6E0808C1E-I/E-P: Features: Fast Access Time 10, 12, 15ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.)(CMOS) : 2mA(Max.)0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.)K6E0808C1E-12 : 80m...

K6E0808C1E-I/E-P Data Sheet

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Part Number:
K6E0808C1E-I/E-P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Fast Access Time 10, 12, 15ns(Max.)
• Low Power Dissipation
  Standby (TTL)     : 20mA(Max.)
                (CMOS) : 2mA(Max.)0.6mA(Max.) L-ver. Only
  Operating K6E0808C1E-10 : 80mA(Max.)
                   K6E0808C1E-12 : 80mA(Max.)
                   K6E0808C1E-15 : 80mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
  - No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention : L-Ver. only
• Standard Pin Configuration
                   K6E0808C1E-J : 28-SOJ-300
                   K6E0808C1E-T : 28-TSOP1-0813. 4F


Pinout

Connection Diagram


Specifications

Parameter Symbol Rating Unit
Voltage on Any Pin Relative to VSS VIN, VOUT -0.5 to 7.0 V
Voltage on VCC Supply Relative to VSS VCC -0.5 to 7.0 V
Power Dissipation PD 1.0 W
Storage Temperature TSTG -65 to 150 °C
Operating Temperature Commercial TA 0 to 70 °C
Industrial TA -40 to 85 °C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The K6E0808C1E-I/E-P is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E-I/E-P uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The K6E0808C1E-I/E-P is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6E0808C1E-I/E-P is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward.




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