K6F2008S2E Selling Leads, Price trend, K6F2008S2E DataSheet download, circuit diagram from SeekIC.com

Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Voltage: 2.3~2.7V• Low Data Retention Voltage: 1.5V(Min)• Three State Outputs• Package Type: 32-TSOP1-0813.4FPinoutSpecifications Item Symbol Ratings Unit Voltage on any pin...

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SeekIC No. : 004383135 Detail

K6F2008S2E: Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Voltage: 2.3~2.7V• Low Data Retention Voltage: 1.5V(Min)• Three State Outputs• Packa...

K6F2008S2E Data Sheet

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Part Number:: K6F2008S2E
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/26

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Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Vo...
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Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Vo...
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Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Vo...

Product Details

Description

Features:

• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 2.3~2.7V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 32-TSOP1-0813.4F

Pinout

Connection Diagram

Specifications

Item	Symbol	Ratings	Unit
Voltage on any pin relative to Vss	V_IN,V_OUT	-0.2 to V_CC+0.3V	V
Voltage on Vcc supply relative to Vss	V_CC	-0.2 to 3.0	V
Power Dissipation	P_D	1.0	W
Storage temperature	T_STG	-65 to 150	°C
Operating Temperature	T_A	-40 to 85	°C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Description

The K6F2008S2E families are fabricated by SAMSUNG's advanced Full CMOS process technology. The families support Various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.

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K6F2008S2E

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