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Part Number: K6R1016V1C-P
Description: The K6R1016V1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by ...
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K6R1016V1C-P
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General Description
K6R1016V1C-P General Description
The K6R1016V1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016V1C is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-Fine pitch BGA.
K6R1016V1C-P Maximum Ratings
|
Parameter |
Symbol |
Rating |
Unit | |
| Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to 4.6 |
V | |
| Voltage on VCC Supply Relative to VSS |
VCC |
-0.5 to 4.6 |
V | |
| Power Dissipation |
Pd |
1 |
W | |
| Storage Temperature |
TSTG |
65 to 150 |
||
| Operating Temperature |
Commercial |
TA |
0 to 70 |
|
|
Industrial |
TA |
-40 to 85 |
||
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
K6R1016V1C-P Features
• Fast Access Time 10,12,15,20ns(Max.)
• Low Power Dissipation
Standby (TTL) : 30mA(Max.)
(CMOS) : 5mA(Max.)
0.5mA(Max.) L-ver. only
Operating * K6R1016V1C-10: 105mA(Max.)
K6R1016V1C-12: 95mA(Max.)
K6R1016V1C-15: 93mA(Max.)
K6R1016V1C-20: 90mA(Max.)
• Single 3.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention: L-ver. only
• Center Power/Ground Pin Configuration
• Data Byte Control: LB: I/O1~ I/O8, UB: I/O9~ I/O16
• Standard Pin Configuration:
K6R1016V1C-J: 44-SOJ-400
K6R1016V1C-T: 44-TSOP2-400BF
K6R1016V1C-F: 48-Fine pitch BGA with 0.75 Ball pitch
• Low Power Dissipation
Standby (TTL) : 30mA(Max.)
(CMOS) : 5mA(Max.)
0.5mA(Max.) L-ver. only
Operating * K6R1016V1C-10: 105mA(Max.)
K6R1016V1C-12: 95mA(Max.)
K6R1016V1C-15: 93mA(Max.)
K6R1016V1C-20: 90mA(Max.)
• Single 3.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention: L-ver. only
• Center Power/Ground Pin Configuration
• Data Byte Control: LB: I/O1~ I/O8, UB: I/O9~ I/O16
• Standard Pin Configuration:
K6R1016V1C-J: 44-SOJ-400
K6R1016V1C-T: 44-TSOP2-400BF
K6R1016V1C-F: 48-Fine pitch BGA with 0.75 Ball pitch
K6R1016V1C-P Connection Diagram
K6R1004C1C
PDF/DataSheet Download
- Datasheet: K6R1004C1C
- File Size: 140468 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K6R1004C1C-C
- SAMSUNG [Samsung semiconductor]
- 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
- 140468 KB
- ·K6R1004C1C-C10
- SAMSUNG [Samsung semiconductor]
- 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
- 140468 KB
- ·K6R1004C1C-C12
- SAMSUNG [Samsung semiconductor]
- 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
- 140468 KB
- ·K6R1004C1C-C15
- SAMSUNG [Samsung semiconductor]
- 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
- 140468 KB
- ·K6R1004C1C-C20
- SAMSUNG [Samsung semiconductor]
- 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
- 140468 KB
- ·K6R1004C1C-I
- SAMSUNG [Samsung semiconductor]
- 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
- 140468 KB
- ·K6R1004C1C-I10
- SAMSUNG [Samsung semiconductor]
- 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
- 140468 KB
- ·K6R1004C1C-I12
- SAMSUNG [Samsung semiconductor]
- 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
- 140468 KB
K6R1016V1C-P Relative Products
K6R1016V1C-L
The K6R1016V1C-L is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1C-L uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle....
K6R1016V1C-I
The K6R1016V1C-I is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1C-I uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle....
K6R1016V1C-C10
The K6R1016V1C-C10 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1C-C10 uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cy...
K6R1016V1C-C
The K6R1016V1C-C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1C-C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle....
K6R1016V1C
The K6R1016V1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Als...
K6R1016C1C-P
The K6R1016C1C-P is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C-P uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle....
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