Purchase K6R3024V1D, In-stock K6R3024V1D From SeekIC.
Part Number: K6R3024V1D
Description: The K6R3024V1D is a 3,145,728-bit high-speed Static Random Access Memory organized as 131,072 words by...
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K6R3024V1D
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DataSheet
General Description
K6R3024V1D General Description
The K6R3024V1D is a 3,145,728-bit high-speed Static Random Access Memory organized as 131,072 words by 24 bits. The K6R3024V1D uses 24 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R3024V1D is a three megabit static RAM constructed on an multilayer laminate substrate using three 3.3V, 128K x 8 static RAMS encapsulated in a Ball Grid Array(BGA).
K6R3024V1D Maximum Ratings
| Parameter | Symbol | Rating | Unit | |
| Voltage on Any Pin Relative to VSS | VIN, VOUT | -0.5 to 4.6 | V | |
| Voltage on VCC Supply Relative to VSS | VCC | -0.5 to 4.6 | V | |
| Power Dissipation | Pd | 2 | W | |
| Storage Temperature | TSTG | -65 to 150 | °C | |
| Operating Temperature | Commercial | TA | 0 to 70 | °C |
| Industrial | TA | -40 to 85 | °C | |
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended periods may affect reliability.
K6R3024V1D Features
• Fast Access Time 9,10,12ns
• Power Dissipation
Standby (TTL) : 40mA(Max.)
(CMOS) : 15mA(Max.)
Operating K6R3024V1D-09 : 170mA(Max.)
K6R3024V1D-10 : 150mA(Max.)
K6R3024V1D-12 : 130mA(Max.)
Single 3.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• 119(7x17)Pin Ball Grid Array Package(14mmx22mm)
• Operating in Commercial and Industrial Temperature range.
• Power Dissipation
Standby (TTL) : 40mA(Max.)
(CMOS) : 15mA(Max.)
Operating K6R3024V1D-09 : 170mA(Max.)
K6R3024V1D-10 : 150mA(Max.)
K6R3024V1D-12 : 130mA(Max.)
Single 3.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• 119(7x17)Pin Ball Grid Array Package(14mmx22mm)
• Operating in Commercial and Industrial Temperature range.
K6R3024V1D
PDF/DataSheet Download
- Datasheet: K6R3024V1D
- File Size: 176671 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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