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Part Number: K6R4008V1B-P

 

 

 

 

Description: The K6R4008V1B is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by...


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K6R4008V1B-P General Description


The K6R4008V1B is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG ¢s advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4008V1B is packaged in a 400 mil 36-pin plastic SOJ or TSOP(II) forward or 44-pin plastic TSOP(II) forward.

K6R4008V1B-P Maximum Ratings

Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to 4.6
V
Voltage on VCC Supply Relative to VSS
VCC
-0.5 to 4.6
V
Power Dissipation
PD
1.0
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature Commercial
TA
0 to 70
°C
ndustrial
TA
-40 to 85
°C

K6R4008V1B-P Features

• Fast Access Time 10,12,15ns(Max.)
• Low Power Dissipation
Standby (TTL) : 50mA(Max.)
(CMOS) : 10mA(Max.)
1.2mA(Max.)- L-Ver.
Operating K6R4008V1B-10 : 205mA(Max.)
K6R4008V1B-12 : 200mA(Max.)
K6R4008V1B-15 : 195mA(Max.)
• Single 3.3 ±0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention ; L-Ver. only
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
K6R4008V1B-J : 36-SOJ-400
K6R4008V1B-T: 36-TSOP2-400F
K6R4008V1B-U: 44-TSOP2-400AF

K6R4008V1B-P Connection Diagram

K6R4008V1B-P Connection Diagram

K6R4008V1B-P datasheet

K6R1004C1C
PDF/DataSheet Download

  • Datasheet: K6R1004C1C
  • File Size: 140468 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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