MFG:SAMSUNG Package Cooled:TSOP D/C:332
MFG: SAMSUNG
Package Cooled: TSOP
D/C: 332
Description: The K6R4008V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by...
The K6R4008V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4008V1D is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II.
| Parameter | Symbol | Rating | Unit | |
| Voltage on Any Pin Relative to VSS | VIN,VOUT | -0.5 to 4.6 | V | |
| Voltage on VCC Supply Relative to VSS | VCC | -0.5 to 4.6 | V | |
| Power Dissipation | PD | 1.0 | W | |
| Storage Temperature | TSTG | -65 to 150 | °C | |
| Operating Temperature | Commercial | TA | 0 to 70 | °C |
| ndustrial | TA | -40 to 85 | °C | |
K6R4008V1D
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