K6T0808C1D

Features: · Process Technology : TFT· Organization : 32Kx8· Power Supply Voltage : 4.5~5.5V· Low Data Retention Voltage : 2V(Min)· Three state output and TTL Compatible· Package Type : 28-DIP-600B, 28-SOP-450 28-TSOP1-0813.4 F/RPinoutSpecifications Item Symbol Ratings Unit Remark Volta...

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K6T0808C1D Picture
SeekIC No. : 004383202 Detail

K6T0808C1D: Features: · Process Technology : TFT· Organization : 32Kx8· Power Supply Voltage : 4.5~5.5V· Low Data Retention Voltage : 2V(Min)· Three state output and TTL Compatible· Package Type : 28-DIP-600B, ...

floor Price/Ceiling Price

Part Number:
K6T0808C1D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2019/9/21

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Product Details

Description



Features:

·  Process Technology : TFT
· Organization : 32Kx8
· Power Supply Voltage : 4.5~5.5V
· Low Data Retention Voltage : 2V(Min)
· Three state output and TTL Compatible
· Package Type : 28-DIP-600B, 28-SOP-450 28-TSOP1-0813.4 F/R



Pinout

  Connection Diagram


Specifications

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V -
Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V -
Power Dissipation PD 1.0 W -
Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA 0 to 70 °C K6T0808C1D-L
-40 to 85 °C K6T0808C1D-P
Soldering temperature and time TSOLDER 260°C, 10sec(Lead Only) - -

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The K6T0808C1D families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery backup operation with low data retention current.

 




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