K6X1008C2D-BF55

The K6X1008C2D-BF55 belongs to the K6X1008C2D family that designed as the 128M x 8 bit / 64M x 16 Bit NAND flash memory. With the help of NAND cell that consists of 32 cells, this K6X1008C2D-BF55 provides the most costeffective solution for the solid state mass storage market. Since the invalid block information is also erasable in most cases, The K6X1008C2D-BF55  is impossible to recover the information once it has been erased.

Features of the K6X1008C2D-BF55 are:(1)fast write cycle time:program time:300 ms (typ.) and block erase time:2 ms (typ.);(2)command / address / data multiplexed I/O port;(3)hardware data protection:program/erase lockout during power transitions;(4)command register operation;(5)cache program operation for high performance program;(6)power-on auto-read operation;(7)intelligent copy-back operation;(8)unique ID for copyright protection;(9)48 - pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free package.

The absolute maximum ratings of the K6X1008C2D-BF55 can be summarized as:(1)voltage on any pin relative to Vss (VIN/OUT):-0.6 to +2.45 V or -0.6 to +4.6 V;(2)short circuit current:5 mA. If you want to know more information such as the electrical characteristics about the K6X1008C2D-BF55, please download the datasheet in www.seekic.com or www.chinaicmart.com .