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Part Number: K6X4008C1F-BF55

 

 

 

 

Description: The K6X4008C1F-BF55 is one member of the K6X4008C1F family which is designed as the 512Kx8 bit low pow...


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K6X4008C1F-BF55 General Description


The K6X4008C1F-BF55 is one member of the K6X4008C1F family which is designed as the 512Kx8 bit low power full CMOS static RAM. This device is fabricated by SAMSUNG's advanced full CMOS process technology. Also this device supports various operating temperature range and various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

Features of the K6X4008C1F-BF55 are:(1)Process Technology: Full CMOS;(2)Organization: 512Kx8;(3)Power Supply Voltage: 4.5 to 5.5V;(4)Low Data Retention Voltage: 2V(Min);(5)Three state output and TTL compatible;(6)Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R.

The absolute maximum ratings of the K6X4008C1F-BF55 can be summarized as:(1)Voltage on any pin relative to Vss: -0.5 to Vcc+0.5 V (max. 7.0 V) V;(2)Voltage on Vcc supply relative to Vss: -0.3 to 7.0 V;(3)Power Dissipation: 1.0 W;(4)Storage temperature: -65 to 150 . If you want to know more information such as the electrical characteristics about the K6X4008C1F-BF55, please download the datasheet in www.seekic.com or www.chinaicmart.com.

K6X4008C1F-BF55 datasheet

K6X4008C1F-BF55
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  • Datasheet: K6X4008C1F-BF55
  • File Size: 181493 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
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