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Part Number: K6X8008C2B

 

 

 

 

Description: The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The fa...


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K6X8008C2B General Description


The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention
current.

K6X8008C2B Maximum Ratings

Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 to VCC+0.5V(max.7.0V)
V
-
Voltage on Vcc supply relative to Vss
VCC
-0.3 to 7.0 V
V
-
Power Dissipation
PD
1.0
W
-
Storage temperature
TSTG
-65 to 150
°C
-
Operating Temperature
TA
0 to 70
°C
K6X8008C2B-B
-40 to 185
°C
K6X8008C2B-F
-40 to 125
°C
K6X8008C2B-Q

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K6X8008C2B Features

· Process Technology: Full CMOS
· Organization: 1M x8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2.0V(Min)
· Three state output and TTL Compatible
· Package Type: 44-TSOP2-400F

K6X8008C2B Connection Diagram

K6X8008C2B Connection Diagram

K6X8008C2B datasheet

K6X8008C2B
PDF/DataSheet Download

  • Datasheet: K6X8008C2B
  • File Size: 134346 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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