K7R163682B-FC25

The K7R163682B-FC25 is 18,874,368-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs.It is implemented with SAMSUNG's high performance 6T CMOS technology and is available in 165pin FBGA packages. Multiple power and ground pins  minimize ground bounce.

The features of K7R163682B-FC25 can be summarized as:(1)1.8V+0.1V/-0.1V  Power Supply.; (2)HSTL I/O; (3)Full data coherency, providing most current data .; (4)Synchronous pipeline read with self timed early write.; (5)Registered address, control and data input/output.; (6)DDR(Double Data Rate) Interface on read and write ports.; (7)Fixed 2-bit burst for both read and write operation.; (8)Clock-stop supports to reduce current.; (9)Single address bus.; (10)Byte write (x9, x18, x36)  function.; (11)Sepatate read/write control pin(R and W); (12)Simple depth expansion with no data contention.; (13)Programmable output impenance.; (14)JTAG 1149.1 compatible test access port.; (15)165FBGA(11x15 ball array FBGA) with body size of 13x15mm.

The absolute maximum ratings of K7R163682B-FC25 are:(1)Voltage on VDD Supply Relative to VSS:-0.5V to 2.9 V; (2)Voltage on VDDQ Supply Relative to VSS:-0.5V to VDD V; (3)Voltage on Input Pin Relative to VSS:-0.5V to VDD+0.3 V; (4)Storage Temperature:-65°C to 150 °C; (5)Operating Temperature:0°C to 70 °C; (6)Storage Temperature Range Under Bias:-10°C to 85 °C.

If you want to know more information such as the electrical characteristics about the K7R163682B-FC25, please download the datasheet in www.seekic.com or www.chinaicmart.com .