K817P

Transistor Output Optocouplers Phototransistor Out Single CTR 50-600%

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SeekIC No. : 0097498 Detail

K817P: Transistor Output Optocouplers Phototransistor Out Single CTR 50-600%

floor Price/Ceiling Price

US $ .12~.13 / Piece | Get Latest Price
Part Number:
K817P
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~50
  • 50~100
  • Unit Price
  • $.13
  • $.13
  • $.12
  • $.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Input Type : DC Maximum Collector Emitter Voltage : 70 V
Maximum Collector Emitter Saturation Voltage : 0.3 V Isolation Voltage : 5000 Vrms
Current Transfer Ratio : 600 % Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA Maximum Power Dissipation : 200 mW
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 40 C
Package / Case : PDIP-4 Packaging : Tube    

Description

Isolation Voltage : 5000 Vrms
Packaging : Tube
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 40 C
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA
Input Type : DC
Maximum Power Dissipation : 200 mW
Package / Case : PDIP-4
Current Transfer Ratio : 600 %
Maximum Collector Emitter Voltage : 70 V


Features:

Endstackable to 2.54 mm (0.1') spacing
DC isolation test voltage VIO = 5 kV
Low coupling capacitance of typical 0.3 pF
Current Transfer Ratio (CTR) selected into groups
Low temperature coefficient of CTR
Wide ambient temperature range
Underwriters Laboratory (UL) 1577 recognized,file number E-76222
CSA (CUL) 1577 recognized,file number E-76222 Double Protection
Coupling System U





Application

Programmable logic controllers, modems, answering machines, general applications






Specifications

Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage VR 6 V
Forward current IF 60 mA
Forward surge current tp 10 s IFSM 1.5 A
Power dissipation Tamb 25 PV 100 mW
Junction temperature Tj 125

Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Peak collector current tp/T = 0.5, tp 10 ms ICM 100 mA
Power dissipation Tamb 25 PV 150 mW
Junction temperature Tj 125

Coupler

Parameter Test Conditions Symbol Value Unit
AC Isolation test voltage (RMS) t = 1 min, f = 50 Hz VIO1) 5 kV
Total power dissipation Tamb 25 Ptot 250 mW
Operating ambient
temperature range
Tamb 40 to +100
Storage temperature range Tstg 55 to +125
Soldering temperature 2 mm from case, t 10 s Tsd 260
1) Related to standard climate 23/50 DIN 50014




Description

The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenideinfrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package.

The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.






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