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Part Number: K9F4G08U0A-PIB0

Category: Other

MFG: Other

 

 

Description: The K9F4G08U0A-PIB0 is one member of the K9F4G08U0A which is designed as the 4G-bit NAND flash memory family with spare 1...


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K9F4G08U0A-PIB0 General Description


The K9F4G08U0A-PIB0 is one member of the K9F4G08U0A which is designed as the 4G-bit NAND flash memory family with spare 128M-bit. This K9F4G08U0A-PIB0 has a program operation that can be performed in typical 200s on the (2K+64)Byte page, and has an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Also this device is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Features of the K9F4G08U0A-PIB0 are:(1)voltage supply is 2.70 V to 3.60 V;(2)organization is memory cell array: (512M + 16M) x 8bit and data register: (2K + 64) x 8bit;(3)fast write cycle time: page program time: 200s(typ.) and block erase time: 1.5ms(typ.);(4)command/address/data multiplexed I/O port;(5)hardware data protection: program/erase lockout during power transitions;(6)command driven operation;(7)intelligent copy-back with internal 1bit/528 Byte EDC;(8)unique ID for copyright protection.

The absolute maximum ratings of the K9F4G08U0A-PIB0 can be summarized as:(1)Voltage on any pin relative to Vss: -0.6 V to +4.6 V;(2)temperature under bias: -40 °C to +125 °C;(3)storage temperature: -65 to +150 °C;(4)Short Circuit Current: 5 mA. If you want to know more information about K9F4G08U0A-PIB0, please download the datasheet in www.seekic.com or www.chinaicmart.com .

K9F4G08U0A-PIB0 datasheet

K9F1208B0B
PDF/DataSheet Download

  • Datasheet: K9F1208B0B
  • File Size: 1054247 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

Find K9F4G08U0A-PIB0 Suppliers

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  • 766143 KB
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  • SAMSUNG [Samsung semiconductor] 
  • 64M x 8 Bit NAND Flash Memory 
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  • ·K9F1208D0B-D
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  • 64M x 8 Bit NAND Flash Memory 
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  • SAMSUNG [Samsung semiconductor] 
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