K9F5608U0A-YCB0

Features: · Voltage Supply : 2.7V~3.6V· Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x8bit· Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte· 528-Byte Page Read Operation - Random Access : 10ms(Max.) - Serial ...

product image

K9F5608U0A-YCB0 Picture
SeekIC No. : 004383452 Detail

K9F5608U0A-YCB0: Features: · Voltage Supply : 2.7V~3.6V· Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x8bit· Automatic Program and Erase - Page Program : (512 + 16)Byte ...

floor Price/Ceiling Price

Part Number:
K9F5608U0A-YCB0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/17

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Voltage Supply : 2.7V~3.6V
· Organization
  - Memory Cell Array : (32M + 1024K)bit x 8bit
  - Data Register : (512 + 16)bit x8bit
· Automatic Program and Erase
  - Page Program : (512 + 16)Byte
  - Block Erase : (16K + 512)Byte
· 528-Byte Page Read Operation
  - Random Access : 10ms(Max.)
  - Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
  - Program time : 200ms(Typ.)
  - Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
  - Endurance : 100K Program/Erase Cycles
  - Data Retention : 10 Years
· Command Register Operation
· Intelligent Copy-Back
· Package :
  - K9F5608U0A-YCB0/YIB0 :48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)



Pinout

  Connection Diagram        Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN
-0.6 to + 4.6
V
VCC
-0.6 to + 4.6
Temperature Under Bias
K9F5608U0A-YCB0
TBIAS
-10 to +125
°C
K9F5608U0A-YIB0
-40 to +125
Storage Temperature
K9F5608U0A-YCB0
TSTG
-65 to +150
°C
K9F5608U0A-YIB0



Description

The K9F5608U0A-YCB0 are a 32M(33,554,432)x8bit NAND Flash Memory with a spare 1,024K(1,048,576)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 200ms and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F5608U0A¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F5608U0A-YCB0/YIB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
Inductors, Coils, Chokes
LED Products
Test Equipment
Batteries, Chargers, Holders
View more