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K9F5616U0C
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MFG:SAMSUNG Package Cooled:BGA

K9F Series Datasheet download

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Part Number: K9F5616U0C

MFG: SAMSUNG

Package Cooled: BGA

Description: Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V,...

K9F5616U0C General Description

Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns(K9F5616Q0C : 60ns) cycle time per word.

The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F56XXX0C¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F56XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

K9F5616U0C Maximum Ratings

Parameter		Symbol		Rating	Unit
			1.8V DEVICE	3.3V/2.65V DEVICE
Voltage on any pin relative to V_SS		V_IN/_OUT	-0.6 to + 2.45	-0.6 to + 4.6	V
		V_CC	-0.2 to + 2.45	-0.6 to + 4.6
		V_CCQ	-0.2 to + 2.45	-0.6 to + 4.6
Temperature Under Bias	K9F56XXX0C-XCB0	T_BIAS	-10 to +125		°C
	K9F56XXX0C-XIB0		-40 to +125
Storage Temperature	K9F56XXX0C-XCB0	T_STG	-65 to +150		°C
	K9F56XXX0C-XIB0
Short Circuit Current		I_os	5		mA

K9F5616U0C Features

· Voltage Supply
- 1.8V device(K9F56XXQ0C) : 1.70~1.95V
- 2.65V device(K9F56XXD0C) : 2.4~2.9V
- 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V
· Organization
- Memory Cell Array
- X8 device(K9F5608X0C) : (32M + 1024K)bit x 8 bit
- X16 device(K9F5616X0C) : (16M + 512K)bit x 16bit
- Data Register
- X8 device(K9F5608X0C) : (512 + 16)bit x 8bit
- X16 device(K9F5616X0C) : (256 + 8)bit x16bit
· Automatic Program and Erase
- Page Program
- X8 device(K9F5608X0C) : (512 + 16)Byte
- X16 device(K9F5616X0C) : (256 + 8)Word
- Block Erase :
- X8 device(K9F5608X0C) : (16K + 512)Byte
- X16 device(K9F5616X0C) : ( 8K + 256)Word
· Page Read Operation
- Page Size
- X8 device(K9F5608X0C) : (512 + 16)Byte
- X16 device(K9F5616X0C) : (256 + 8)Word
- Random Access : 10ms(Max.)
- Serial Page Access : 50ns(Min.)* *K9F5616Q0C : 60ns
· Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Intelligent Copy-Back
· Unique ID for Copyright Protection
· Power-On Auto-Read Operation
· Safe Lock Mechanism
· Package
- K9F56XXX0C-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F56XXX0C-DCB0/DIB0 63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F5608U0C-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm)
- K9F56XXX0C-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F56XXX0C-HCB0/HIB0 63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F5608U0C-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package * K9F5608U0C-V,F(WSOPI ) is the same device as K9F5608U0C-Y,P(TSOP1) except package type.

K9F5616U0C Connection Diagram

K9F5616U0C datasheet

K9F5616U0C
PDF/DataSheet Download

Datasheet: K9F5616U0C
File Size: 671684 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Click here to Download

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Related Part Number

K9F5616U0C Relative Products

K9F5616U0B-YIB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-YIB0 is 256M bit with spare 8M bit capacity. The K9F5616U0B-YIB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program opera...
K9F5616U0B-YCB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-YCB0 is 256M bit with spare 8M bit capacity. The K9F5616U0B-YCB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program opera...
K9F5616U0B-PIB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-PIB0is 256M bit with spare 8M bit capacity. The K9F5616U0B-PIB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operat...
K9F5616U0B-PCB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-PCB0 is 256M bit with spare 8M bit capacity. The K9F5616U0B-PCB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program opera...
K9F5616U0B-HIB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-HIB0 is 256M bit with spare 8M bit capacity. The K9F5616U0B-HIB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program opera...
K9F5616U0B-HCB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-HCB0 is 256M bit with spare 8M bit capacity. The K9F5616U0B-HCB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program opera...

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