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Part Number: K9K1208U0A-YIB0
Description: The K9K1208U0A are a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its N...


Description: The K9K1208U0A are a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its N...
The K9K1208U0A are a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528- byte page in typically 200s and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 60ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1208U0A¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1208U0A-YCB0/YIB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
| Parameter | Symbol |
Rating |
Unit | ||
| Voltage on any pin relative to VSS | VIN | -0.6 to + 4.6 |
V | ||
| VCC | -0.6 to + 4.6 | ||||
| Temperature Under Bias | K9K1208U0A-YCB0 | TBIAS | -10 to +125 | ||
| K9K1208U0A-YIB0 | -40 to +125 | ||||
| Storage Temperature | TSTG | -65 to +150 | |||
K9K1208U0A-YIB0
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