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Part Number: K9S1208V0M/A-SSB0

 

 

 

 

Description: Using Nand flash memory, SmartMedia provides the most costeffective solution for the solid state mass ...


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K9S1208V0M/A-SSB0 General Description


Using Nand flash memory, SmartMedia provides the most costeffective solution for the solid state mass storage market. A program operation is implemented by the single page of 528 bytes in typical 200ms and an erase operation is done by the single block of 16K bytes in typical 2ms. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs.The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9D1G08V0X,K9S1208V0X¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. SmartMedia is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.

K9S1208V0M/A-SSB0 Maximum Ratings

Parameter Symbol Rating Unit
Voltage on any pin relative to VSS VIN -0.6 to + 4.6 V
VCC -0.6 to + 4.6
Temperature Under Bias TBIAS -10 to +65 °C
Storage Temperature TSTG -20 to +65 °C

NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K9S1208V0M/A-SSB0 Features

•Single 2.7V~3.6V Supply
•Organization
- Memory Cell Array :
- K9S1208V0X: (64M + 2,048K)bit x 8bit
- K9D1G08V0X: (128M + 4,096K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
•Automatic Program and Erase
- Page Program : (512 + 16)Byte
* Multi Page Program : 2K Bytes
- Block Erase : (16K + 512)Byte
•528-Byte Page Read Operation
- Random Access : 12ms(Max.)
- Serial Page Access : 50ns(Min.)
•Fast Write Cycle Time
- Program Time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
•Command/Address/Data Multiplexed I/O Port
•Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
•Command Register Operation
•22pad SmartMediaTM(SSFDC)
•Unique ID for Copyright Protection

K9S1208V0M/A-SSB0 datasheet

K9S1208V0M/A-SSB0
PDF/DataSheet Download

  • Datasheet: K9S1208V0M/A-SSB0
  • File Size: 673214 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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