Purchase K9S3208V0A-SSB0, In-stock K9S3208V0A-SSB0 From SeekIC.
Part Number: K9S3208V0A-SSB0
Description: The K9S3208V0A is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit. Its NAND cel...
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K9S3208V0A-SSB0
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DataSheet
General Description
K9S3208V0A-SSB0 General Description
The K9S3208V0A is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 250ms and an erase operation can be performed in typically 2ms on an 8K-byte block.
Data in the page can be read out at 50ns cycle time per byte.The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9S3208V0A extended reliability of one million program/erase cycles by providing ECC(Error Correction Code) with real time mapping-out algorithm.
The K9S3208V0A is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.
K9S3208V0A-SSB0 Maximum Ratings
| Parameter | Symbol |
Rating |
Unit | |
| Voltage on any pin relative to VSS | VIN |
-0.6 to + 4.6 |
V | |
| Temperature Under Bias | TBIAS |
-10 to +65 |
||
| Storage Temperature | TSTG |
-20 to +65 |
||
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
K9S3208V0A-SSB0 Features
` Single 3.3 volt Supply
` Organization
- Memory Cell Array : (4M + 128K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
` Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
- Status Register
` 528-Byte Page Read Operation
- Random Access : 10s(Max.)
- Serial Page Access : 50ns(Min.)
` Fast Write Cycle Time
- Program Time : 250s(Typ.)
- Block Erase Time : 2ms(Typ.)
` Command/Address/Data Multiplexed I/O port
` Hardware Data Protection
- Program/Erase Lockout During Power Transitions
` Reliable CMOS Floating-Gate Technology
- Endurance : 1Million Program/Erase Cycles
- Data Retention : 10 years
` Command Register Operation
` 22 pad SmartMediaTM(SSFDC)
` Organization
- Memory Cell Array : (4M + 128K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
` Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
- Status Register
` 528-Byte Page Read Operation
- Random Access : 10s(Max.)
- Serial Page Access : 50ns(Min.)
` Fast Write Cycle Time
- Program Time : 250s(Typ.)
- Block Erase Time : 2ms(Typ.)
` Command/Address/Data Multiplexed I/O port
` Hardware Data Protection
- Program/Erase Lockout During Power Transitions
` Reliable CMOS Floating-Gate Technology
- Endurance : 1Million Program/Erase Cycles
- Data Retention : 10 years
` Command Register Operation
` 22 pad SmartMediaTM(SSFDC)
K9S3208V0A-SSB0
PDF/DataSheet Download
- Datasheet: K9S3208V0A-SSB0
- File Size: 362405 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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