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Part Number: K9S6408V0A-SSB0

 

 

 

 

Description: The K9S6408V0A is a 8M(8,388,608)x8bit NAND Flash Memory ith a spare 256K(262,144)x8bit. Its NAND cell...


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K9S6408V0A-SSB0 General Description


The K9S6408V0A is a 8M(8,388,608)x8bit NAND Flash Memory ith a spare 256K(262,144)x8bit. Its NAND cell provides the ost cost-effective solution for the solid state mass storage arket. A program operation programs the 528-byte page in ypically 200s and an erase operation can be performed in typically ms on an 8K-byte block. Data in the page can be read ut at 50ns cycle time per byte. The I/O pins serve as the ports or address and data input/output as well as command inputs. he on-chip write controller automates all program and erase unctions including pulse repetition, where required, and internal erify and margining of data. Even the write-intensive systems an take advantage of the K9S6408V0A¢s extended eliability of 1,000,000 program/erase cycles by providing CC(Error Correcting Code) with real time mapping-out algorithm.

he K9S6408V0A is an optimum solution for large nonvolatile torage applications such as solid state file storage, digital oice recorder, digital still camera and other portable applications equiring non-volatility.

K9S6408V0A-SSB0 Maximum Ratings

Parameter Symbol
Rating
Unit
Voltage on any pin relative to VSS VIN
-0.6 to + 4.6
V
VCC -0.6 to + 4.6
Temperature Under Bias TBIAS
-10 to +65
Storage Temperature TSTG
-20 to +65
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions s detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K9S6408V0A-SSB0 Features

` Single 2.7V~3.6V Supply
` Organization
   - Memory Cell Array : (8M + 256K)bit x 8bit
   - Data Register : (512 + 16)bit x8bit
` Automatic Program and Erase
   - Page Program : (512 + 16)Byte
   - Block Erase : (8K + 256)Byte
` 528   -Byte Page Read Operation
   - Random Access : 7s(Max.)
   - Serial Page Access : 50ns(Min.)
` Fast Write Cycle Time
   - Program Time : 200s(Typ.)
   - Block Erase Time : 2ms(Typ.)
` Command/Address/Data Multiplexed I/O port
` Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
` Reliable CMOS Floating   -Gate Technology
   - Endurance : 1Million Program/Erase Cycles
   - Data Retention : 10 years
` Command Register Operation
` 22 pad SmarMediaTM(SSFDC)

K9S6408V0A-SSB0 datasheet

K9S6408V0A-SSB0
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  • Datasheet: K9S6408V0A-SSB0
  • File Size: 356935 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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