K9W8G08U1M

Offered in 512Mx8bit or 256Mx16bit, the K9W8G08U1M  is 4G bit with spare 128M bit capacity. K9W8G08U1M  NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112- byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle time per byte(30ns, only X8 3.3v device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller K9W8G08U1M automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9W8G08U1M  extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9W8G08U1M  is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 4Gb stacked with two chip selects is also available in standard TSOPI package.