Features: Power Supply Voltage : 2.7V~3.1V
Organization
- NOR Flash : 8,388,608 x 8 bit / 4,194,304 x 16 bit
- NAND Flash : (8M + 256K)bit x 16bit
- UtRAM : 2Mbit x 16 bit
Access Time
- NOR Flash : 70ns(Max.)
- NAND Flash : Random : 10us(Max.), Serial : 50ns(Min.)
- UtRAM : 85ns
Power Consumption (typical value)
- NOR Flash Read Current : 14mA (@5MHz)
Program/Erase Current : 15mA
Read while Program or Read while Erase : 35mA
Standby Mode/Autosleep Mode : 10µA
- NAND Flash Read Current : 10mA(@20MHz)
Program/Erase Current : 10mA
Standby Current : 10µA
- UtRAM Operating Current : 30mA
Standby Current : 80µA
NOR Flash Secode(Security Code) Block : Extra 64KB Block
NOR Flash Block Group Protection / Unprotection
NOR Flash Bank Size : 16Mb / 48Mb , 32Mb / 32Mb
NAND Flash Automatic Program and Erase
Page Program: (256 + 8)Word, Block Erase: (8K + 256)Word
NAND Flash Fast Write Cycle Time
Program time : 200µs(Typ.)
Block Erase Time : 2ms(Typ.)
Endurance
NOR : 100,000 Program/Erase Cycles Minimum
NAND : 100,000 Program/Erase Cycles Minimum with ECC
: 1,000 Program/Erase Cycles Maximum without ECC
Data Retention : 10 years
Operating Temperature : -25°C ~ 85°C
Package : 80 - Ball TBGA Type - 8 x 12mm, 0.8 mm pitch
Specifications
|
Parameter |
Symbol |
Rating |
Unit |
|
Voltage on any pin relative to VSS |
Vcc |
VccR,VccF,VccU,VccQU |
-0.2 to Vcc+0.3 |
V |
|
RESET
|
VIN |
-0.2 to 12.5V |
|
wp
/ACC |
-0.2 to 12.5V |
|
Other Balls |
-0.2 to 3.6V |
|
Temperature Under Bias |
TBIAS |
-40 to + 125 |
|
|
Storage Temperature |
TSTG |
-65 to + 150 |
|
Operating Temperature |
TA |
-25 to + 85 |
DescriptionThe KAB0xD100M featuring single 3.0V power supply is a Multi Chip Package Memory which combines 64Mbit NOR Flash, 128Mbit NAND Flash and 32Mbit Unit Transistor CMOS RAM. 64Mbit NOR Flash memory is organized as 8M x8 or 4M x16 bit,128Mbit NAND Flash memory is organized as 8M x16 bit and 32Mbit UtRAM is organized as 2M x16 bit. The memory architecture of NOR Flash memory is designed to divide its memory arrays into 135 blocks and this provides highly flexible erase and program capability. This device is capable of reading data from one bank while programming or erasing in the other bank with dual bank organization. NOR Flash memory performs a program operation in units of 8 bits (Byte) or 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operation is completed for typically 0.7sec.
In 128Mbit NAND Flash a 256-word page program can be typically achieved within 200
µs and an 8K-word block erase can be typically achieved within 2ms. In serial read operation, a byte can be read by 50ns. DQ pins serve as the ports for address and data input/output as well as command inputs. The KAB0xD100M is suitable for the memory of mobile communication system to reduce not only mount area but also power consumption. This device is available in 80-ball TBGA package.
KAB0xD100M - TxGP Data Sheet
