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KB827-B

Features: 1.Lead forming (gull wing) type, for surface mounting.2.High isolation voltage between input and output (Viso=5000 Vrms).3.Compact dual-in-line package KB827-B: 2-channel type.4.Recognized by UL and CUL, file NO.E225308.5.Approved by VDE 0884 Teil2(NO:40006364) (Creepage distance between...

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KB827-B: Features: 1.Lead forming (gull wing) type, for surface mounting.2.High isolation voltage between input and output (Viso=5000 Vrms).3.Compact dual-in-line package KB827-B: 2-channel type.4.Recognized...

KB827-B Data Sheet

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Part Number:
KB827-B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

1.Lead forming (gull wing) type, for surface mounting.
2.High isolation voltage between input and output (Viso=5000 Vrms).
3.Compact dual-in-line package KB827-B: 2-channel type.
4.Recognized by UL and CUL, file NO.E225308.
5.Approved by VDE 0884 Teil2(NO:40006364) (Creepage distance between input and output:7mm or more).
6.RoHS Compliant.




Application

1.Computer terminals.
2.Registers,copiers,automatic vending machines.
3.System appliances, measuring instruments.
4.Programmable logic controller.
5.Signal transmission between circuits of different potentials and impedances.


Specifications

Parameter
Symbol
Rating
Unit
Input
 Forward current
IF
50
mA
Reverse Voltage
VR
6
V
Power dissipation
P
70
mW
Output
 Collector-emitter voltage
VCEO
35
V
Emitter-collector voltage
VECO
6
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Total power dissipation
Ptot
200
mW
*1 Isolation voltage
Viso
5000
Vrms
Operating temperature
Topr
-30 to +100
°C
Storage temperature
Tstg
-55 to +125
°C
*2 Soldering temperature
Tsol
260
°C


* 1 40 to 60% RH,AC for 1 minute.
* 2 For 10 seconds




Description

1.The KB827-B (2-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor.
2.The lead pitch is 2.54mm.
3.Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm.




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