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KBPC1010G/W

Features: Glass Passivated Die Construction Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for Maximum Heat Dissipation Case to Terminal Isolation Voltage 2500VSpecifications Characteristic Symbol KBP1000G/W KBP1001G/W KBP1002G/W ...

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KBPC1010G/W: Features: Glass Passivated Die Construction Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for Maximum Heat Dissipation Case to Terminal Isolation Volta...

KBPC1010G/W Data Sheet

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Part Number:
KBPC1010G/W
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Glass Passivated Die Construction 
Low Reverse Leakage Current 
Low Power Loss, High Efficiency 
Electrically Isolated Epoxy Case for  Maximum Heat Dissipation
Case to Terminal Isolation Voltage 2500V


Specifications

Characteristic
Symbol
KBP
1000G/W
KBP
1001G/W
KBP
1002G/W
KBP
1004G/W
KBP
1006G/W
KBP
1008G/W
KBP
1010G/W
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@TA = 50°C
IO
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
200
A
Forward Voltage (per diode) @IF = 5.0A
VFM
1.1
V
TPeak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 125°C
IRM
5.0
500
A
Typical Thermal Resistance (Note 1)
CJ
300
pF
Typical Thermal Resistance (Note 2)
RJC
5.3
K/W
RMS Isolation Voltage from Case to Lead
VISO
2500
V
Operating and Storage Temperature Range
Tj,TSTG
-65 to +150

°C

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case per element mounted on heatsink.


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