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KDB2532

Features: ·rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A·Qg(tot) = 82nC (Typ.), VGS = 10V·Low Miller Charge·Low QRR Body Diode·UIS Capability (Single Pulse and Repetitive Pulse)Specifications Parameter Symbol Rating Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ...

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SeekIC No. : 004384959 Detail

KDB2532: Features: ·rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A·Qg(tot) = 82nC (Typ.), VGS = 10V·Low Miller Charge·Low QRR Body Diode·UIS Capability (Single Pulse and Repetitive Pulse)Specifications Param...

KDB2532 Data Sheet

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Part Number:
KDB2532
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A
·Qg(tot) = 82nC (Typ.), VGS = 10V
·Low Miller Charge
·Low QRR Body Diode
·UIS Capability (Single Pulse and Repetitive Pulse)


Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS 150 V
Gate to source voltage VGSS ±20 V
Drain current-Continuous TC=25
                                        TA=25		 ID 79 A
8 A
Power dissipation
Derate above 25 		PD 310
2.07		 W/
Thermal Resistance Junction to Ambient RJA 43 /W
Channel Temperature Tch 175
Storage Temperature Tstg -55 to +175



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