KDS8928A

Features: `N-Channel5.5 A, 30 V RDS(ON) = 0.030 @ VGS = 4.5VRDS(ON) = 0.038 @ VGS =2.5V`P-Channel-4 A, -20 V RDS(ON) = 0.055 @ VGS =- 4.5 VRDS(ON) = 0.070 @ VGS =-2.5V`High density cell design for extremely low RDS(ON).`High power and handling capability in a widelyused surface mount package`Dual ...

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SeekIC No. : 004385054 Detail

KDS8928A: Features: `N-Channel5.5 A, 30 V RDS(ON) = 0.030 @ VGS = 4.5VRDS(ON) = 0.038 @ VGS =2.5V`P-Channel-4 A, -20 V RDS(ON) = 0.055 @ VGS =- 4.5 VRDS(ON) = 0.070 @ VGS =-2.5V`High density cell design for e...

floor Price/Ceiling Price

Part Number:
KDS8928A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

`N-Channel
5.5 A, 30 V RDS(ON) = 0.030 @ VGS = 4.5V
RDS(ON) = 0.038 @ VGS =2.5V
`P-Channel
-4 A, -20 V RDS(ON) = 0.055 @ VGS =- 4.5 V
RDS(ON) = 0.070 @ VGS =-2.5V
`High density cell design for extremely low RDS(ON).
`High power and handling capability in a widely
used surface mount package
`Dual (N & P-Channel) MOSFET in surface mount package.





Pinout

  Connection Diagram




Specifications

Parameter
Symbol
N-Channel
P- Channel
Uni
Drain to Source Voltage
VDSS
30
30
V
Gate to Source Voltage
VGS
8
-8
V
Drain Current Continuous (Note 1a)
ID
5.5
-4
A
Drain Current Pulsed
20
-20
A
Power Dissipation for Single Operation
PD
2
W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
PD
1.6
W
1
0.9
Operating and Storage Temperature
TJ, TSTG
-55 to 150
Thermal Resistance Junction to Ambient (Note 1a)
RJA
78
/W
Thermal Resistance Junction to Case (Note 1)
RJC
40
/W





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