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KDS9952A

Features: N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V.P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.High density cell design or extremely low RDS(ON).High power and current handling capability in a widely used surface mount package.Dual (N & P-Channel) MOSFET in surface mount package.Pinout...

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KDS9952A: Features: N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V.P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.High density cell design or extremely low RDS(ON).High power and current handling capability in...

KDS9952A Data Sheet

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Part Number:
KDS9952A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V.
P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.
High density cell design or extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.




Pinout

Connection Diagram




Specifications

Parameter
Symbol
N-Channel
P-Channel
Unit
Drain to Source Voltage
VDSS
30
-30
V
Gate to Source Voltage
VGS
±20
±20
V
Drain Current Continuous (Note 1a)
Drain Current Pulsed
ID
±3.7
±15
±2.9
±10
A
Power Dissipation for Dual Operation
PD
2
A
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
PD
1.6
1
0.9
W
Operating junction and storage temperature range
Tj,Tstg
-55 to +150
Thermal Resistance Junction to Case (Note 1)
RJC
40
/W
Thermal Resistance Junction to Ambient (Note 1a)
RJA
78
/W





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