Position: Home  > All Categories> Integrated Circuits (ICs) > KHB019N20P1

KHB019N20P1

Features: ·VDSS=200V, ID=19A·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V·Qg(typ.)=35nCSpecifications Parameter Symbol KHB019N20P1 KHB019N20F1 Unit Drain to source voltage VDSS 20 20 V Gate to source voltage VGSS ±12 ±8.0 V Drain current Continuous *1 TA = 25 TA =...

product image

KHB019N20P1 Picture
See larger image
SeekIC No. : 004385340 Detail

KHB019N20P1: Features: ·VDSS=200V, ID=19A·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V·Qg(typ.)=35nCSpecifications Parameter Symbol KHB019N20P1 KHB019N20F1 Unit Drain to source voltage VDSS ...

KHB019N20P1 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
KHB019N20P1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/15

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·VDSS=200V, ID=19A
·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V
·Qg(typ.)=35nC


Specifications

Parameter Symbol KHB019N20P1 KHB019N20F1 Unit
Drain to source voltage VDSS 20 20 V
Gate to source voltage VGSS ±12 ±8.0 V
Drain current Continuous *1 TA = 25
TA = 85
t 5		 ID 19
12.1		 19
12.1		 A
Drain current Pulsed (Note1) IDP 76 76* A
Single Pulsed Avalanche Energy
(Note 2)		 EAS 250 mJ
Repetitive Avalanche Energy
(Note 1)		 EAR 14 mJ
Peak Diode Recovery dv/dt
(Note 3)		 dv/dt 4.5 V/ns
Drain PowerDissipation
Tc=25
Derate above 25		 PD

140
1.12

 

 50
0.4		 W
Operating and Storage Temperature Range TJ, Tstg -55 to 150
* : Drain current limited by maximum junction temperature.


Description

This planar stripe MOSFET KHB019N20P1 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. KHB019N20P1 is mainly suitable for DC/DC converters and switching mode power supplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Isolators
HCPL062N
HCPL316J
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Cables, Wires
821-0814-a
415-0100-150
Prototyping Products
AVT4168
DE1
Discrete Semiconductor Products
T508N12TOF
MUR20040
Optical Inspection Equipment
AA924
A21K4B
View more