KHB8D8N25P

Features: VDSS= 250V, ID= 8.8ADrain-Source ON Resistance :RDS(ON)=450m @VGS = 10VQg(typ.) = 29.5nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5N20F2 Drain-Source VoltageGate-Source Voltage VDSSVGSS 250±30 VV Drain Current @Tc=2...

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SeekIC No. : 004385360 Detail

KHB8D8N25P: Features: VDSS= 250V, ID= 8.8ADrain-Source ON Resistance :RDS(ON)=450m @VGS = 10VQg(typ.) = 29.5nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5...

floor Price/Ceiling Price

Part Number:
KHB8D8N25P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

VDSS= 250V, ID= 8.8A
Drain-Source ON Resistance :
RDS(ON)=450m @VGS = 10V
Qg(typ.) = 29.5nC



Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB9D5N20P1
KHB9D5N20F1
KHB9D5N20F2
Drain-Source Voltage

Gate-Source Voltage
VDSS

VGSS
250

±30
V

V
Drain Current @Tc=25
Pulsed(Note1)
ID
IDP
8.8
35.2
8.8*
35.2*
A
Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)
EAS

EAR

dv/dt
285

7.4

5.5
mJ

mJ

V/ns
Drain Power
Dissipation
Ta=25
Derate above25
PD
74
0.59
38
0.3
W
W/
Maximum Junction Temperature

Storage Temperature Range
Tj

Tstg
150

-55 150


Thermal Characteristics
Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to- Ambient
RthJC

RthJA
1.69

62.5
3.29

62.5
/W

/W

* : Drain current limited by maximum junction temperature.




Description

This planar stripe MOSFET KHB8D8N25P has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.




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