KI2306DS

Features: ·TrenchFET Power MOSFET·100% Rg TestedSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous drain current (TJ = 150 ) *1,2 TA=25TA=70 ID 3.52.8 A Pulsed drain current IDM 16 A Continuous sourc...

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SeekIC No. : 004385401 Detail

KI2306DS: Features: ·TrenchFET Power MOSFET·100% Rg TestedSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous drain curren...

floor Price/Ceiling Price

Part Number:
KI2306DS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

·TrenchFET Power MOSFET
·100% Rg Tested



Specifications

Parameter Symbol Rating Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous drain current (TJ = 150 ) *1,2 TA=25
TA=70
ID 3.5
2.8
A
Pulsed drain current IDM 16 A
Continuous source current (diode conduction) *1,2 IS 1.25 A
Maximum Power dissipation *1,2 TA=25
TA=70
PD 1.25
0.8
W
Operating Junction and Storage Temperature Range TJ,TSTG - 55 to 150
Maximum Junction to Ambienta t 5 sec 100
Steady State
RthJA 100
130
/W
*1 Surface Mounted on FR4 Board , t 10sec .
*2 Pulse width limited by maximum junction temperature.



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