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KI4464DY

Features: PWM Optimized for (Lowest Qg and Low RG)TrenchFET Power MOSFETSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±8 V Continuous Drain Current (TJ=150 ) TA=25 TA=70 ID 2.21.7 ...

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SeekIC No. : 004385419 Detail

KI4464DY: Features: PWM Optimized for (Lowest Qg and Low RG)TrenchFET Power MOSFETSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 200 V Gate-...

KI4464DY Data Sheet

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Part Number:
KI4464DY
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

PWM Optimized for (Lowest Qg and Low RG)
TrenchFET Power MOSFET


Specifications

Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
200
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current (TJ=150 ) TA=25
                                                            TA=70
ID
2.2
1.7
1.7
1.3
A
Pulsed Drain Current
IDM
8
Avalanche Current*         L = 0.1 mH
IAS
3
Single Avalanche Energy L = 0.1 mH
EAS
0.45
mJ
Continuous Source Current (diode conduction) *
IS
2.1
1.2
A
Power Dissipation * TA=25
                                 TA=70
PD
2.5
1.6
1.5
0.9
W
Jumction Temperature and Storage Temperature
Tj.Tstg
-55 to 150



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