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KK33153

Features: • High Current Output Stage: 1.0 A Source/2.0 A Sink• Protection Circuits for Both Conventional and Sense IGBTs• Programmable Fault Blanking Time• Protection against Overcurrent and Short Circuit• Undervoltage Lockout Optimized for IGBT's• Negative Gat...

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SeekIC No. : 004385577 Detail

KK33153: Features: • High Current Output Stage: 1.0 A Source/2.0 A Sink• Protection Circuits for Both Conventional and Sense IGBTs• Programmable Fault Blanking Time• Protection agains...

KK33153 Data Sheet

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Part Number:
KK33153
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Current Output Stage: 1.0 A Source/2.0 A Sink
• Protection Circuits for Both Conventional and Sense IGBTs
• Programmable Fault Blanking Time
• Protection against Overcurrent and Short Circuit
• Undervoltage Lockout Optimized for IGBT's
• Negative Gate Drive Capability
• Cost Effectively Drives Power MOSFETs and Bipolar Transistors


Pinout

Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Power Supply Voltage
VCC to VEE
Kelvin Ground to VEE (Note 1 )
VCC-VEE
KGnd - VEE
20
20
V
Logic Input
Vin
VEE-O,3 to VCC
V
Current Sense Input
VS
-0.3 to Vcc
V
Blanking/Desaturation Input
VBD
-0.3 to Vcc
V
Gate Drive Output
Source Current
Sink Current
Diode Clamp Current
IO
1.0
2.0
1.0
A
Fault Output
Source Current
Sink Curent
IFO
25
10
mA
Power Dissipation and Thermal Characteristics
D Suffix SO-8 Package, Case 751
Maximum Power Dissipation @ TA = 50 Thermal Resistance, Junction-to-Air
P Suffix DIP-8 Package, Case 626
Maximum Power Dissipation @ TA = 50 Thermal Resistance, Junction-to-Air
PD
RJA
PD
RJA
0.56
180
1.0
100
W
/W
W
/W
Operating Junction Temperature
TJ
+150
Operating Ambient Temperature
TA
-40 to +105
Storage Temperature Range
Tstg
-65 to +150



Description

The KK33153 is specifically designed as an IGBT driver for high power applications that include ac induc-tion motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual-inline and surface mount packages and in-clude the following features




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