KM4164B

The KM4164B is a fully decoded NMOS Dynamic Random Access Memory organized as 65,536 one-bit words. The design is optimized for high speed, high performance applications such as computer memory, peripheral stora e and environments where low power dissipation and compact layout are required. The KM4164B features page mode which allows high speed random access of up to 256-blts within the same row. Multiplexed row and column address Inputs permit the KM4164B to be housed in a standard 16-pin DIP. The KM4164B is fabricated using Samsung's advanced silicon gate NMOS process. This process, coupled with single transistor memory storage cells, permits maximum circuit density and minimal chip size. Clock timin requirements are noncritical, and power supply tolerance is very wide. All inputs and output are TTL compatible.

The features of KM4164B can be summarized as (1)page mode capablility; (2)single +5V ±10% power supply; (3)common I/O using early write; (4)TTL compatible lnputs and output; (5)schmitt triggers on all input control lines; (6)RAS-only and hidden refresh capablllty; (7)128 cycle/2ms retresh; (8)JEDEC standard plnout in 16-pin DIP.

The absolute maximum ratings of KM4164B are (1)voltage on any pin relative to VSS VIN, VOUT: -2.0 to +7.0V; (2)voltage on VCC supply relative to VSS VCC: -1 to +7.5V; (3)storage temperature Tstg: -65 to + 150°C; (4)power dissipation PD: 1.0W; (5)short circuit output current lDS: 50mA(Permanent device damage may occur it "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to; (6)absolute maximum rating conditions for extended periods may affect device reliability.)