KM416RD8AC(D)

¨ Highest sustained bandwidth per DRAM device
      - 1.6GB/s sustained data transfer rate
      - Separate control and data buses for maximized efficiency
      - Separate row and column control buses for easy scheduling and highest performance
      - 32 banks: four transactions can take place simultaneously at full bandwidth data rates
¨ Low latency features
      - Write buffer to reduce read latency
      - 3 precharge mechanisms for controller flexibility
      - Interleaved transactions
¨ Advanced power management:
     - Direct RDRAM operates from a 2.5 volt supply
     - Multiple low power states allows flexibility in power consumption versus time to transition to active state
     - Power-down self-refresh
¨ Organization: 1Kbyte pages and 32 banks, x 16/18
     - x18 organization allows ECC configurations or increased storage/bandwidth
     - x16 organization for low cost applications
¨ Uses Rambus Signaling Level (RSL) for up to 800MHz operation