Purchase KM416RD8AS, In-stock KM416RD8AS From SeekIC.
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KM416RD8AS
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DataSheet
General Description
KM416RD8AS Maximum Ratings
| Symbol | Parameter | Min | Max | Unit |
| VI,ABS | Voltage applied to any RSL or CMOS pin with respect to Gnd | - 0.3 | VDD+0.3 | V |
| VDD,ABS, VDDA,ABS | Voltage on VDD and VDDA with respect to Gnd | - 0.5 | VDD+1.0 | V |
| TSTORE | Storage temperature | - 50 | 100 | °C |
KM416RD8AS Features
Highest sustained bandwidth per DRAM device
- 1.6GB/s sustained data transfer rate
- Separate control and data buses for maximized efficiency
- Separate row and column control buses for easy scheduling and highest performance
- 32 banks: four transactions can take place simultaneously at full bandwidth data rates
Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
Advanced power management:
- Multiple low power states allows flexibility in powerconsumption versus time to transition to active state
- Power-down self-refresh
Organization: 1Kbyte pages and 32 banks, x 16
Uses Rambus Signaling Level (RSL) for up to 800MHz operation
- 1.6GB/s sustained data transfer rate
- Separate control and data buses for maximized efficiency
- Separate row and column control buses for easy scheduling and highest performance
- 32 banks: four transactions can take place simultaneously at full bandwidth data rates
Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
Advanced power management:
- Multiple low power states allows flexibility in powerconsumption versus time to transition to active state
- Power-down self-refresh
Organization: 1Kbyte pages and 32 banks, x 16
Uses Rambus Signaling Level (RSL) for up to 800MHz operation
KM416RD8AS
PDF/DataSheet Download
- Datasheet: KM416RD8AS
- File Size: 3921213 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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KM416RD8AS Relative Products
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