KM416RD8AS

Features: Highest sustained bandwidth per DRAM device - 1.6GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions can take place simultaneously at...

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KM416RD8AS Picture
SeekIC No. : 004386049 Detail

KM416RD8AS: Features: Highest sustained bandwidth per DRAM device - 1.6GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and column control buses for ea...

floor Price/Ceiling Price

Part Number:
KM416RD8AS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/28

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Product Details

Description



Features:

 Highest sustained bandwidth per DRAM device
      - 1.6GB/s sustained data transfer rate
      - Separate control and data buses for maximized efficiency
      - Separate row and column control buses for easy scheduling and highest performance
      - 32 banks: four transactions can take place simultaneously at full bandwidth data rates
 Low latency features
      - Write buffer to reduce read latency
      - 3 precharge mechanisms for controller flexibility
      - Interleaved transactions
 Advanced power management:
      - Multiple low power states allows flexibility in powerconsumption versus time to transition to active state
      - Power-down self-refresh
 Organization: 1Kbyte pages and 32 banks, x 16
 Uses Rambus Signaling Level (RSL) for up to 800MHz operation



Specifications

Symbol Parameter Min Max Unit
VI,ABS Voltage applied to any RSL or CMOS pin with respect to Gnd - 0.3 VDD+0.3 V
VDD,ABS, VDDA,ABS Voltage on VDD and VDDA with respect to Gnd - 0.5 VDD+1.0 V
TSTORE Storage temperature - 50 100 °C



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