Purchase KM416S8030, In-stock KM416S8030 From SeekIC.
Part Number: KM416S8030
Description: The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 w...
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KM416S8030
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DataSheet
General Description
KM416S8030 General Description
The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clcok cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
KM416S8030 Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to VSS | VIN, VOUT | -1.0 ~ 4.6 | V |
| Voltage on VDD supply relative to VSS | VDD, VDDQ | -1.0 ~ 4.6 | V |
| Storage temperature | TSTG | -55 ~ +150 | °C |
| Power dissipation | PD | 1.0 | W |
| Short circuit current | IOS | 50 | mA |
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
KM416S8030 Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS Latency (2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst Read Single-bit Write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS Latency (2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst Read Single-bit Write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
KM416S8030 Connection Diagram
KM416S8030
PDF/DataSheet Download
- Datasheet: KM416S8030
- File Size: 123388 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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