Purchase KM416S8030B, In-stock KM416S8030B From SeekIC.
Part Number: KM416S8030B
Description: The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 ...
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KM416S8030B
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DataSheet
General Description
KM416S8030B General Description
The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
KM416S8030B Maximum Ratings
|
Parameter |
Symbol |
Rating |
Unit |
|
Voltage on any pin relative to VSS |
VIN,VOUT |
-1.0 ~ 4.6 |
V |
|
Voltage on VCC supply relative to VSS |
TVCC |
-1.0 ~ 4.6 |
V |
|
Storage Temperature |
Tstg |
-55 to +150 |
°C |
|
Power Dissipation |
PD |
1 |
W |
|
Short Circuit Output Current |
IOS |
50 |
mA |
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
KM416S8030B Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
KM416S8030B Connection Diagram
KM416S8030B
PDF/DataSheet Download
- Datasheet: KM416S8030B
- File Size: 139245 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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