Purchase KM416S8030BN, In-stock KM416S8030BN From SeekIC.
Part Number: KM416S8030BN
Description: The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 ...
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KM416S8030BN
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DataSheet
General Description
KM416S8030BN General Description
The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
KM416S8030BN Maximum Ratings
| Parameter |
Symbol |
Value |
Units |
| Voltage on any pin relative to Vss |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
| Voltage on VDD supply relative to Vss | VDD, VDDQ |
-1.0 ~ 4.6 |
V |
| Storage temperature |
TSTG |
-55 ~ +150 |
|
| Power dissipation |
PD |
1 |
W |
| Short circuit current |
IOS |
50 |
mA |
KM416S8030BN Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
- CAS latency (2 & 3)
- Burst length (1, 2, 4, 8 & Full page)
- Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
- CAS latency (2 & 3)
- Burst length (1, 2, 4, 8 & Full page)
- Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
KM416S8030BN Connection Diagram
KM4100
PDF/DataSheet Download
- Datasheet: KM4100
- File Size: 341939 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
- ·KM4100IC8
- FAIRCHILD [Fairchild Semiconductor]
- Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
- 341939 KB
- ·KM4100IC8TR3
- FAIRCHILD [Fairchild Semiconductor]
- Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
- 341939 KB
- ·KM4100IT5
- FAIRCHILD [Fairchild Semiconductor]
- Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
- 341939 KB
- ·KM4100IT5TR3
- FAIRCHILD [Fairchild Semiconductor]
- Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
- 341939 KB
- ·KM4101
- FAIRCHILD [Fairchild Semiconductor]
- Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
- 341939 KB
- ·KM4101IC8
- FAIRCHILD [Fairchild Semiconductor]
- Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
- 341939 KB
- ·KM4101IC8TR3
- FAIRCHILD [Fairchild Semiconductor]
- Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
- 341939 KB
- ·KM4101IT6
- FAIRCHILD [Fairchild Semiconductor]
- Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
- 341939 KB
KM416S8030BN Relative Products
KM416S8030B
The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system cl...
KM416S8030
The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clo...
KM416S4030C
The KM416S4030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG ¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system cl...
KM416S4030B
The KM416S4030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clo...
KM416S1120D
The KM416S1120D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock...
KM416S1021C
The KM416S1021C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock...
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