KM416V1204BJ

This is a family of 1,048,576 x16 bit extended data out CMOS DRAMs. dxtended data out mode offers high speed random access of memory cells within the same row, so called hyper page mode. power supply voltage or refresh cycle (1K Ref. or 4kref), access time (-45, -5, -6 or -7), power consumption (normal or low power ) and package type (SOJ or TSOP-ll) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, self-refresh operation is available in L-version. This 1Mx16 extended data out mode DRAM family is fabricated using Samsung*s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memroy unit for microcomputer, personal computer and portable machines.

The features of KM4164B can be summarized as (1)extended data out mode operation (fast page mode with extended data out); (2)2CAS byte/word read/write operation; (3)CAS-betore-RAS refresh capability; (4)RAS-only and Hidden refresh capability; (5)self-relresh capability (L-ver); (6)compatible inputs and outputs; (7)early write or output enable controlled write; (8)JEDEC standard pinout; (9)available in plastic SOJ and TSOP(ll) packages; (10)single +5V±10% power supply (5V product); (11)Single +3.3V±0.3V power supply (3.3V product).

The absolute maximum ratings of KM416V1204BJ are (1)voltage on any pin relative to VSS VIN,VOUT: -0.5 to +4.6V(3.3V)/-1 to +7.0V(5V); (2)voltage on VCC supply relative to Vss VCC: -0.5 to +46V(3.3V)/-1 to +7.0V(5V); (3)storage temperature Tstg: -55 to +150°C(3.3V, 5V); (4)power dissipation PD: 1W(3.3V, 5V); (5)short circuit output current IOS: 50mA(3.3V, 5V)(Permanent device damage may occur if "absolute maximum ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may altect device reliability.).