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Part Number: KM416V256D
Description: This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed rando...


Description: This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed rando...
This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5,-6,-7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS -before-RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 fast page mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
|
Parameter |
Symbol |
Rating |
Unit | |
|
3.3V |
5V | |||
|
Voltage on any pin relative to VSS |
VIN,VOUT |
-0.5 to +4.6 |
-1 to +7.0 |
V |
|
Voltage on VCC supply relative to VSS |
TVCC |
-0.5 to +4.6 |
-1 to +7.0 |
V |
|
Storage Temperature |
Tstg |
-55 to +150 |
-55 to +150 |
·· |
|
Power Dissipation |
PD |
1 |
1 |
W |
|
Short Circuit Output Current |
IOS |
50 |
50 |
mA |
KM416V256D
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