KM418RD8AC(D)

Features: ¨ Highest sustained bandwidth per DRAM device - 1.6GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions can take place simultaneously ...

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KM418RD8AC(D) Picture
SeekIC No. : 004386074 Detail

KM418RD8AC(D): Features: ¨ Highest sustained bandwidth per DRAM device - 1.6GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and column control buses for ...

floor Price/Ceiling Price

Part Number:
KM418RD8AC(D)
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2019/9/14

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Product Details

Description



Features:

¨ Highest sustained bandwidth per DRAM device
      - 1.6GB/s sustained data transfer rate
      - Separate control and data buses for maximized efficiency
      - Separate row and column control buses for easy scheduling and highest performance
      - 32 banks: four transactions can take place simultaneously at full bandwidth data rates
¨ Low latency features
      - Write buffer to reduce read latency
      - 3 precharge mechanisms for controller flexibility
      - Interleaved transactions
¨ Advanced power management:
     - Direct RDRAM operates from a 2.5 volt supply
     - Multiple low power states allows flexibility in power consumption versus time to transition to active state
     - Power-down self-refresh
¨ Organization: 1Kbyte pages and 32 banks, x 16/18
     - x18 organization allows ECC configurations or increased storage/bandwidth
     - x16 organization for low cost applications
¨ Uses Rambus Signaling Level (RSL) for up to 800MHz operation




Specifications

Symbol Parameter Min Max Unit
VI,ABS Voltage applied to any RSL or CMOS pin with respect to Gnd - 0.3 VDD+0.3 V
VDD,ABS, VDDA,ABS Voltage on VDD and VDDA with respect to Gnd - 0.5 VDD+1.0 V
TSTORE Storage temperature - 50 100 °C



Description

Figure 2 is a block diagram of the 128/144 Mbit Direct RDRAM KM418RD8AC(D). KM418RD8AC(D) consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM, and a Direct Rambus interface block which permits an external controller to access this core at up to 1.6GB/s.


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