KM4216C256

The KM4216C256 is designed as the 262,144 x 16 bit extended data out CMOS DRAMs. This device CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

Features of the KM4216C256 are:(1)Extended Data Out Mode operation; (2)2 CAS Byte/Wrod Read/Write operation; (3)CAS-before-RAS refresh capability; (4)RAS-only and Hidden refresh capability; (5)Self-refresh capability (L-ver only); (6)TTL(5V)/LVTTL(3.3V) compatible inputs and outputs; (7)Early Write or output enable controlled write; (8)JEDEC Standard pinout; (9)Available in 40-pin SOJ 400mil and 44(40)-pin packages; (10)Triple +5V?0% power supply (5V product); (11)Triple +3.3V?.3V power supply (3.3V product).

The absolute maximum ratings of the KM4216C256 can be summarized as:(1)Voltage on any pin relative to VSS: -0.5V to +4.6V (3.3V) or -1.0V to +7.0V (5V);(2)Voltage on VCC supply relative to VSS: -0.5V to +4.6V (3.3V) or -1.0V to +7.0V (5V);(3)Storage Temperature: -55 to +150 °C;(4)Power Dissipation: 1 W;(5)Short Circuit Output Current: 50 mA. If you want to know more information such as the electrical characteristics about the KM4216C256, please download the datasheet in www.seekic.com or www.chinaicmart.com.